Solid SiC

Silicon Carbide Media Description

Silicon carbide is a third-generation semiconductor material. Compared with ordinary silicon materials, silicon carbide has very outstanding advantages. It not only overcomes some of the shortcomings of ordinary silicon materials, but also has very good performance in power consumption.

Silicon carbide (SiC), gallium nitride (GaN), aluminum nitride (ALN), gallium oxide (Ga2O3), etc., are collectively called wide bandgap semiconductor materials because the bandgap width is greater than 2.2eV, and are also called the third generation in China. Semiconductor material.

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Coarse Silicon Carbide Specification

China Coarse Silicon Carbide manufacturers--ZhenAn Group

Silicon Carbide 80 Grit manufacturer-ZhenAn International

80 grit silicon carbide supplier-ZhenAn International

Electrical performance advantages of silicon carbide power devices:

1. High voltage resistance: The critical breakdown electric field is as high as 2MV/cm (4H-SiC), so it has higher voltage resistance (10 times that of Si).

2. Easy heat dissipation: Due to the high thermal conductivity of SiC material (three times that of Si), heat dissipation is easier and the device can operate at higher ambient temperatures. Theoretically, SiC power devices can operate at a junction temperature of 175°C, so the size of the heat sink can be significantly reduced.

3. Low conduction loss and switching loss: SiC material has twice the electron saturation speed of Si, making SiC devices have extremely low conduction resistance (1/100 than Si) and low conduction loss; SiC material has 3 times the Due to the bandgap width of Si, the leakage current is several orders of magnitude smaller than that of Si devices, which can reduce the power loss of power devices; there is no current tailing phenomenon during the turn-off process, and the switching loss is low, which can greatly increase the switching frequency of practical applications. (10 times that of Si).

4. The size of the power module can be reduced: Due to the high current density of the device (for example, Infineon products can reach 700A/cm), at the same power level, the package size of the full SiC power module (SiC MOSFETsSiC SBD) is significantly smaller than the Si IGBT power module.

60 90 Grit Silicon Carbide Customer visit photos

FAQ

Q : How can you control your quality?

A : For each production processing, ZhenAn have complete QC system for the chemical composition and Physical properties. After production, all the goods will be tested, and the quality certificate will be shipped along with goods.

Q: Are you a manufacture or trader?

A: Both, we not only can provide the high quality products with the best price, but also can offer the best pre-sale service and after-service.

Q : Do you provide free samples of Solid SiC?

A : Of course, free samples are available.

Q: What is your lead time?

A : It usually needs about 15- 20 days after receiving the PO.

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